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X-ray photoemission spectroscopy : ウィキペディア英語版
X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique that measures the elemental composition at the parts per thousand range, empirical formula, chemical state and electronic state of the elements that exist within a material. XPS spectra are obtained by irradiating a material with a beam of X-rays while simultaneously measuring the kinetic energy and number of electrons that escape from the top 0 to 10 nm of the material being analyzed. XPS requires high vacuum (''P'' ~ 10−8 millibar) or ultra-high vacuum (UHV; ''P'' < 10−9 millibar) conditions, although a current area of development is ambient-pressure XPS, in which samples are analyzed at pressures of a few tens of millibar.
XPS is a surface chemical analysis technique that can be used to analyze the surface chemistry of a material in its as-received state, or after some treatment, for example: fracturing, cutting or scraping in air or UHV to expose the bulk chemistry, ion beam etching to clean off some or all of the surface contamination (with mild ion etching) or to intentionally expose deeper layers of the sample (with more extensive ion etching) in depth-profiling XPS, exposure to heat to study the changes due to heating, exposure to reactive gases or solutions, exposure to ion beam implant, exposure to ultraviolet light.
*XPS is also known as ESCA (Electron Spectroscopy for Chemical Analysis), an abbreviation introduced by Kai Siegbahn's research group to emphasize the chemical (rather than merely elemental) information that the technique provides.
*In principle XPS detects all elements. In practice, using typical laboratory-scale X-ray sources, XPS detects all elements with an atomic number (''Z'') of 3 (lithium) and above. It cannot easily detect hydrogen (''Z'' = 1) or helium (''Z'' = 2).
*Detection limits for most of the elements (on a modern instrument) are in the parts per thousand range. Detection limits of parts per million (ppm) are possible, but require special conditions: concentration at top surface or very long collection time (overnight).
*XPS is routinely used to analyze inorganic compounds, metal alloys, semiconductors, polymers, elements, catalysts, glasses, ceramics, paints, papers, inks, woods, plant parts, make-up, teeth, bones, medical implants, bio-materials, viscous oils, glues, ion-modified materials and many others.
*XPS is less routinely used to analyze the hydrated forms of some of the above materials by freezing the samples in their hydrated state in an ultra pure environment, and allowing or causing multilayers of ice to sublime away prior to analysis. Such hydrated XPS analysis allows hydrated sample structures, which may be different from vacuum-dehydrated sample structures, to be studied in their more relevant as-used hydrated structure. Many bio-materials such as hydrogels are examples of such samples.

==Measurements==

XPS is used to measure:
*elemental composition of the surface (top 0–10 nm usually)
*empirical formula of pure materials
*elements that contaminate a surface
*chemical or electronic state of each element in the surface
*uniformity of elemental composition across the top surface (or line profiling or mapping)
*uniformity of elemental composition as a function of ion beam etching (or depth profiling)
XPS can be performed using a commercially built XPS system, a privately built XPS system, or a synchrotron-based light source combined with a custom-designed electron energy analyzer. Commercial XPS instruments in the year 2005 used either a focused 20- to 500-micrometer-diameter beam of monochromatic Al Kα X-rays, or a broad 10- to 30-mm-diameter beam of non-monochromatic (polychromatic) Al Kα X-rays or Mg Kα X-rays. A few specially designed XPS instruments can analyze volatile liquids or gases, or materials at pressures of roughly 1 torr (1.00 torr = 1.33 millibar), but there are relatively few of these types of XPS systems. The ability to heat or cool the sample during or prior to analysis is relatively common.
Because the energy of an X-ray with particular wavelength is known (for Al Kα X-rays, ''E''photon = 1486.7 eV), and because the emitted electrons' kinetic energies are measured, the electron binding energy of each of the emitted electrons can be determined by using an equation that is based on the work of Ernest Rutherford (1914):
:E_\text = E_\text - \left(E_\text + \phi\right)
where ''E''binding is the binding energy (BE) of the electron, ''E''photon is the energy of the X-ray photons being used, ''E''kinetic is the kinetic energy of the electron as measured by the instrument and \phi is the work function dependent on both the spectrometer and the material. This equation is essentially a conservation of energy equation. The work function term \phi is an adjustable instrumental correction factor that accounts for the few eV of kinetic energy given up by the photoelectron as it becomes absorbed by the instrument's detector. It is a constant that rarely needs to be adjusted in practice.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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